Tuesday, May 15, 2007

PRAM -- future memory and electronic storage technology

Our class notes cover progress in electronic, storage and communication technology. Russell Kay has written a short introduction to an emerging technology, phase change random access memory (PRAM). PRAM records ones and zeros by changing the electrical resistance of a microscopic spot. High resistance = 0, low resistance = 1. Intel expects to ship product in 2008, and PRAM may one day replace flash storage and RAM memory.

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